| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state image sensor that can discharge unnecessary electric charges generated in the deep portion of a substrate. SOLUTION: The solid-state image sensor has n-type channel regions 50 formed in the surface of a p-type semiconductor substrate 66, p-type isolating regions 52 formed in the surface of the substrate 66 in a state where the regions 52 are extended in parallel with each other and divide the channel regions 50, and n-type drain regions 54 formed in a state where the regions 54 are extended in parallel with the isolating regions 52. The drain regions 54 are formed deeper than the channel regions 50 in the depthwise direction of the semiconductor substrate 66. COPYRIGHT: (C)2004,JPO&NCIPI
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