VESSEL FOR MANUFACTURING COMPOUND SEMICONDUCTOR SINGLE CRYSTAL, COMPOUND SEMICONDUCTOR SINGLE CRYSTAL MANUFACTURED BY USING THE SAME, AND COMPOUND SEMICONDUCTOR WAFER

摘要

PROBLEM TO BE SOLVED: To provide a structure of a vessel for manufacturing a compound semiconductor single crystal, which is suitable as the vessel for growing the compound semiconductor single crystal by a vertical growth method and with which the shape of the solid-liquid interface can be controlled without necessitating complicated equipment. SOLUTION: The vessel used in the vertical growth method is made of PBN and has a seed crystal accommodating part 3a, a cross sectional area increasing part 3b and a crystal growth part 3c. In the vessel, the value of the intensity ratio äI(002)/I(100)} of (002)plane to (100)plane in X-ray analysis, measured at the plane vertical to the thickness direction of the PBN plate constituting the vessel, of the cross sectional area increasing part 3b is set to be lower than those of the seed crystal accommodating part 3a and the crystal growth part 3c. COPYRIGHT: (C)2004,JPO&NCIPI