发明名称 |
Method of manufacturing a floating gate and method of manufacturing a non-volatile semiconductor memory device comprising the same |
摘要 |
A method of manufacturing a floating gate provides an enhancement for the efficiencies of electron discharge and injection. First, a conductive pattern, constituting the arefloating gateforeon, is formed on a substrate. A first insulation layer is formed on a sidewall of the conductive pattern, and then a second insulation layer is formed at an upper portion of the conductive pattern in ways that each increase the sharpness of an edge portion where the sidewall and upper portions of the conductive pattern meet. Therefore, electron transference from the floating gate to a control gate is facilitated.
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申请公布号 |
US2004171217(A1) |
申请公布日期 |
2004.09.02 |
申请号 |
US20040787968 |
申请日期 |
2004.02.27 |
申请人 |
CHUNG JIN-KUK;MOON CHANG-ROK |
发明人 |
CHUNG JIN-KUK;MOON CHANG-ROK |
分类号 |
H01L21/8247;H01L21/28;H01L21/336;H01L21/8242;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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