METHOD FOR COPPER CMP USING POLYMERIC COMPLEXING AGENTS

摘要

The invention provides a method of polishing a substrate comprising a metal layer comprising copper. The method comprises the steps of (i) providing a chemical-mechanical polishing system comprising a liquid carrier, a polishing pad, an abrasive, and a negatively-charged polymer or copolymer, (ii) contacting the substrate with the poloshing system, and (iii) abrading at least a portion of the substrate to polish the metal layer of the substrate. The negatively-charged polymer or copolymer comprises one or more monomers selected from sulfonic acids, sulfonates, sulfates, phosphonic acids, phosphonates, and phosphates, has a molecular weight of about 20,000 g/mol or more, and coats at least a portion of the abrasive such that the abrasive has a zeta potential value that is lowered upon interaction of the negatively-charged polymer or copolymer with the abrasive.