| 发明名称 |
Process for preparing a film of titanium dioxide and silicon dioxide |
| 摘要 |
A film containing TiO2 and SiO2. It is formed by depositing TiO2 and SiO2 onto a substrate by sputtering method, or depositing their vapors thereon. The film is heat treated at a temperature of 200-1200 DEG C to form a film of anatase type TiO2 containing SiO2. <IMAGE> |
| 申请公布号 |
EP0967008(B1) |
申请公布日期 |
2004.09.01 |
| 申请号 |
EP19990304362 |
申请日期 |
1999.06.04 |
| 申请人 |
AGENCY OF INDUSTRIAL SCIENCE AND TECHNOLOGY |
发明人 |
NISHII, JUNJI;DA SILVA, ADILSON OLIVEIRA;CUNNINGHAM, DEREK A H;INOUE, TAKAHIRO |
| 分类号 |
B01D53/86;B01J21/06;B01J21/08;B01J37/02;B01J37/34;C01B33/12;C01G23/00;C23C14/08;C23C14/40 |
主分类号 |
B01D53/86 |
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