METHOD FOR FABRICATING HIGH-PERFORMANCE SEMICONDUCTOR DEVICE BY REDUCING JUNCTION CAPACITANCE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to prevent an increase of junction capacitance on a junction part between a source/drain and a well by implanting selectively impurity ions into only a channel part of a MOS transistor. CONSTITUTION: A well(104) is formed on a semiconductor substrate(100) by performing a field ion implantation process. A pseudo gate electrode is formed on a predetermined part of the semiconductor substrate. A source/drain is formed on the semiconductor substrate corresponding left and right sides of the pseudo gate electrode. An interlayer dielectric(116) is formed between the pseudo gate electrode and the pseudo gate electrode. An intaglio gate pattern is formed within the interlayer dielectric. An ion implantation process is performed to control a threshold voltage. A gate electrode is formed within the intaglio gate pattern.