ELECTRON BEAM LITHOGRAPHY SYSTEM, METHOD FOR EXPOSING HOLE PATTERN AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE TO SHORTEN INTERVAL OF EXPOSURE TIME

摘要

PURPOSE: An electron beam lithography system is provided to shorten an interval of exposure time by decreasing the number of shots in performing an exposure process on a hole pattern of a logic device. CONSTITUTION: An electron beam lithography system performs a partial exposure at a time by using electron beam, including the second molding aperture(102) with a cell(21) in which a plurality of hole patterns of a logic device is installed. In the cell, a plurality of hole patterns are disposed at an interval that is natural number times the interval of power lines in the logic device.