THIN FILM TRANSISTOR ARRAY SUBSTRATE AND FABRICATION METHOD THEREOF, ESPECIALLY CONCERNED WITH INCREASING THE SIZE OF CONTACT HOLES REGARDLESS OF LINE WIDTHS OF THE SOURCE/DRAIN ELECTRODES

摘要

PURPOSE: A TFT array substrate is provided to form line widths of source/drain electrodes so as to be bigger than sizes of source/drain contact holes thereby improving transmittance and aperture ratio. CONSTITUTION: An active layer(114) is formed on a lower substrate. A gate electrode(106) is overlapped with the active layer(114). Plural gate insulating films are formed between the gate electrode(106) and the active layer(114) and on the gate electrode(106). Through-holes pierce through the plural gate insulating films, and expose the active layer(114). A source electrode(108) and a drain electrode(110) have narrower line widths than the through-holes, and are contacted with the active layer(114).