发明名称 Ferroelectric capacitor and process for its manufacture
摘要 Forming a capacitor, by (a) forming a matrix of ferroelectric capacitor elements on a substrate, (b) forming a CAP layer over the ferroelectric capacitor elements, and (c) etching the CAP layer to a more uniform thickness. A capacitor that has a substrate layer, a matrix of ferroelectric capacitor elements including a first electrode layer substantially fixed relative to the substrate, a second electrode layer, and a ferroelectric layer sandwiched between the first and second electrode layers is disclosed. The capacitor has a shoulder layer extending from the substrate to the matrix, and a CAP layer etched to have substantially constant thickness covering sides of the matrix extending beyond the substrate.
申请公布号 US6785119(B2) 申请公布日期 2004.08.31
申请号 US20020307230 申请日期 2002.11.29
申请人 INFINEON TECHNOLOGIES AG 发明人 EGGER ULRICH;ZHUANG HAOREN;HORNIK KARL
分类号 H01L21/02;H01L21/311;H01L21/316;(IPC1-7):H01G4/228 主分类号 H01L21/02
代理机构 代理人
主权项
地址