发明名称 External connection terminal and semiconductor device
摘要 A structure in which a phosphorus-nickel layer, a rich phosphorus nickel layer that contains phosphorus or boron higher than this phosphorus-nickel layer, a nickel-tin ally layer, a tin-rich tin alloy layer, and a tin alloy solder layer are formed in sequence on an electrode. Accordingly, adhesiveness between a metal pattern used as the electrode, the wiring, or the pad and the solder can be improved.
申请公布号 US6784543(B2) 申请公布日期 2004.08.31
申请号 US20030374965 申请日期 2003.02.28
申请人 FUJITSU LIMITED 发明人 MATSUKI HIROHISA;MAKINO YUTAKA;IKUMO MASAMITSU;SATO MITSUTAKA;FUJISAWA TETSUYA;AIBA YOSHITAKA
分类号 C23C18/16;C23C18/52;C23C28/00;C23C30/00;H01L21/321;H01L21/60;H01L23/12;H01L23/485;H01L23/498;H05K1/18;H05K3/24;(IPC1-7):H01L23/52 主分类号 C23C18/16
代理机构 代理人
主权项
地址