发明名称 |
Flash memory device and a method for fabricating the same |
摘要 |
A flash memory having a charge-storage dielectric layer and a method for forming the same are provided. According to one embodiment, charge-storage dielectric layers are formed over the first and second active regions. The charge-storage layer over the first active region is not connected to the charge-storage layer over the second active region. A gate line overlies the charge-storage layer and extends across the first and second active regions and the isolation region. The charge-storage layer can be formed only where a gate line intersects an active region of a semiconductor substrate, not on an isolation region. Thus, undesirable influence or disturbance from adjacent memory cells can be avoided.
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申请公布号 |
US6784055(B2) |
申请公布日期 |
2004.08.31 |
申请号 |
US20030418701 |
申请日期 |
2003.04.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SHIN YOU-CHEOL;PARK JONG-WOO;CHOI JUNG-DAL |
分类号 |
H01L21/8247;H01L21/8246;H01L27/10;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/336;H01L29/76 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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地址 |
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