发明名称 |
Critical doping in high-Tc superconductors for maximal flux pinning and critical currents |
摘要 |
A method for maximising critical current density (Jc) of high temperature superconducting cuprate materials (HTSC) which comprises controlling the doping state or hole concentration of the materials to be higher than the doping state or hole concentration of the material that provides a maximum superconducting transition temperature (Tc), and to lie at about a value where the normal-state pseudogap reduces to a minimum. Jc is maximised1 at hole concentration p≈0.19. HTSC compounds are also claimed.
|
申请公布号 |
US6784138(B2) |
申请公布日期 |
2004.08.31 |
申请号 |
US20020327408 |
申请日期 |
2002.12.20 |
申请人 |
INDUSTRIAL RESEARCH LIMITED |
发明人 |
TALLON JEFFERY LEWIS |
分类号 |
H01L39/12;(IPC1-7):C04B35/64;C04B101/00 |
主分类号 |
H01L39/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|