发明名称 |
Magnetoresistive random access memory device structures |
摘要 |
A method for fabricating an MRAM device structure includes providing a substrate on which is formed a first transistor and a second transistor. An operative memory element device is formed in electrical contact with the first transistor. At least a portion of a false memory element device is formed in electrical contact with the second transistor. A first dielectric layer is deposited overlying the at least a portion of a false memory element device and the operative memory element device. The first dielectric layer is etched to simultaneously form a first via to the at least a portion of a false memory element device and a second via to the operative memory element device. An electrically conductive interconnect layer is deposited so the electrically conductive interconnect layer extends from the at least a portion of a false memory element device to the operative memory element device.
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申请公布号 |
US6784510(B1) |
申请公布日期 |
2004.08.31 |
申请号 |
US20030417851 |
申请日期 |
2003.04.16 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
GRYNKEWICH GREGORY W.;DEHERRERA MARK;DURLAM MARK A.;TRACY CLARENCE J. |
分类号 |
G11C;G11C8/02;H01L21/00;H01L21/8246;H01L27/22;H01L29/00;H01L29/82;(IPC1-7):H01L29/00 |
主分类号 |
G11C |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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