发明名称 |
Simultaneous native oxide removal and metal neutral deposition method |
摘要 |
A method of fabricating a semiconductor device having a dielectric structure on which an interconnect structure is optionally patterned using lithographic and etching techniques, within a single deposition chamber, is provided. The dielectric structure may optionally be covered by diffusion barrier materials prior to a sputter etching process. This sputter etching process is used to remove the native oxide on an underneath metal conductor surface and includes a directional gaseous bombardment with simultaneous deposition of metal neutral. Diffusion barrier materials may also be deposited into the pattern.
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申请公布号 |
US6784105(B1) |
申请公布日期 |
2004.08.31 |
申请号 |
US20030410496 |
申请日期 |
2003.04.09 |
申请人 |
INFINEON TECHNOLOGIES NORTH AMERICA CORP.;INTERNATIONAL BUSINESS MACHINES CORPORATION;UNITED MICROELECTRONICS CO. |
发明人 |
YANG CHIH-CHAO;WANG YUN;CLEVENGER LARRY;SIMON ANDREW;GRECO STEPHEN;CHANDA KAUSHIK;SPOONER TERRY;COWLEY ANDY;FANG SUNFEI |
分类号 |
H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/768 |
代理机构 |
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