发明名称 Method of determining post-etch offset in exposed-to-embedded overlay
摘要 The present invention describes a structure for and a method of forming a first set and a second set of features in a substrate; covering the first and second set of features with a material; forming a third set of features in the material and removing the material to expose the first set of features, leaving the second set of features embedded below the material; measuring post-etch overlay between the first set and the third set of features; and measuring post-develop overlay between the second set and the third set of features.
申请公布号 US6784004(B2) 申请公布日期 2004.08.31
申请号 US20030662021 申请日期 2003.09.11
申请人 INTEL CORPORATION 发明人 WONG ALAN
分类号 H01L21/66;(IPC1-7):H01L21/66 主分类号 H01L21/66
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