发明名称 |
Process for forming metalized contacts to periphery transistors |
摘要 |
A process and apparatus directed to forming metal plugs in a peripheral logic circuitry area of a semiconductor device to contact both N+ and P+ doped regions of transistors in the peripheral logic circuitry area. The metal plugs are formed after all high temperature processing used in wafer fabrication is completed. The metal plugs are formed without metal diffusing into the active areas of the substrate. The metal plugs may form an oval slot as seen from a top down view of the semiconductor device.
|
申请公布号 |
US6784501(B2) |
申请公布日期 |
2004.08.31 |
申请号 |
US20030400492 |
申请日期 |
2003.03.28 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
LANE RICHARD H.;MCDANIEL TERRY |
分类号 |
H01L21/3205;H01L21/768;H01L21/8242;H01L23/52;H01L23/522;H01L27/108;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/3205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|