发明名称 |
SOLID STATE IMAGE DEVICE, FABRICATING METHOD THEREOF AND TRANSMISSION-TYPE CCD IMAGE SENSOR TO COMPLETELY TRANSMIT SIGNAL CHARGES ACCUMULATED IN PHOTODIODE |
摘要 |
PURPOSE: A solid state image device is provided to completely transmit signal charges accumulated in a photodiode even in a low power supply voltage by including a potential smoothing unit. CONSTITUTION: A plurality of pixel cells are disposed in a semiconductor substrate(14). A driving unit is installed to drive each pixel cell. Each pixel cell includes a photodiode(5), a transmission transistor(6) and a potential smoothing unit. The photodiode converts incident light into signal charges to accumulate the signal charges. The transmission transistor is installed to read out the signal charges accumulated in the photodiode. The potential smoothing unit makes the potential from the photodiode to the transmission transistor vary smoothly.
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申请公布号 |
KR20040075709(A) |
申请公布日期 |
2004.08.30 |
申请号 |
KR20040003311 |
申请日期 |
2004.01.16 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
TANAKA SYOUJI;MATSUNAGA YOSHIYUKI |
分类号 |
H01L27/146;H01L27/148;H01L31/02;H01L31/10;H04N5/335;H04N5/369;H04N5/372;H04N5/374;(IPC1-7):H01L27/148 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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