METHOD OF MANUFACTURING COMPOUND SEMICONDUCTOR, SEMICONDUCTOR MATERIAL, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To make even an in-plane carrier concentration distribution of an InGaP film formed on a semiconductor substrate. SOLUTION: When carriers are doped into a GaAs single crystal substrate 1 using an n-InGaP layer 2 expressed by formula InXGa1-Xand using phosphine as a p-source for vapor phase growth, a V/III ratio is set at 100 or less as its growth conditions. Consequently, the in-plane carrier concentration distribution of the resultant InGaP film becomes uniform to such an extent as practically negligible. COPYRIGHT: (C)2004,JPO&NCIPI