| 摘要 |
PURPOSE: A phase shift mask, a formation method of a pattern using the phase shift mask and a preparation method of an electronic device are provided, to form a pattern having an excellent size uniformity without the deterioration of a degree of integration with a low cost. CONSTITUTION: The phase shift mask(5) comprises a substrate(1) which comprises a material transparent to the exposure light, and a half-tone screening layer(2) which is formed on the substrate and has an aperture part(2a) exposing some surface of the substrate, wherein the phase of the exposure light transmitting the half-tone screening layer is different from that of the exposure light transmitting the aperture part, the light transmissivity defined by the ratio of the light intensity of the exposure light transmitting the aperture part and that of the exposure light transmitting the half-tone screening layer is 15-25 %, and the dimension of the aperture part is 0.26-0.45 when measured under the condition of wavelength (λ)/numerical aperture(NA) of 1. |
