| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is made thin to realize high-speed operation. SOLUTION: In this semiconductor device, a lamination plate acting as a supporting substrate for a conductor pattern and an insulation layer is eliminated. A copper alloy plate 17 is used in place of the lamination plate, and a chip carrier 2 is used. The chip carrier 2 is acquired in the following way: an insulation layer 6, a conductor pattern 9, an insulation layer 10 and a conductor pattern 13 as minimum necessary are laminated in this order on the copper alloy plate 17, to constitute a lamination part 15; after the lamination is finished, by etching the copper alloy plate 17 into a specified pattern, an inverted trapezoid like external connecting terminal 4 is constituted. Thereby the carrier is constituted only by the conductor pattern, the insulation layer and the external connecting terminal as minimum necessary. An IC chip 3 is mounted on the chip carrier 2, and molding is performed with a mold resin while leaving a part of the external connecting terminal 4, to obtain the semiconductor device 1. COPYRIGHT: (C)2004,JPO&NCIPI
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