发明名称 DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a distributed feedback laser device reluctant to oscillate in the short wavelength side mode and easy to oscillate in the long wavelength side mode. SOLUTION: Lower barrier layers and lower well layers narrower in band gap than the lower barrier layers are alternately laminated for the constitution of a lower quantum well structure that extends in the direction of the resonator. An intermediate layer is arranged on the lower quantum well structure, and it has a band gap wider than that of the lower barrier layers. Upper quantum well structures are built on the intermediate layer, periodically arranged in the direction of the oscillator. They comprise upper well layers and upper barrier layers wider in band gap than the upper well layers, and are alternately laminated. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004241569(A) 申请公布日期 2004.08.26
申请号 JP20030028554 申请日期 2003.02.05
申请人 FUJITSU LTD 发明人 KOBAYASHI HIROHIKO;SHOJI HAJIME
分类号 H01S5/12;H01S3/08;H01S5/00;H01S5/22;H01S5/227;H01S5/343;(IPC1-7):H01S5/12 主分类号 H01S5/12
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