| 摘要 |
PROBLEM TO BE SOLVED: To reduce polarization-dependent loss by reducing reflection on the interface between a cap layer and a light absorption layer. SOLUTION: An n-InP buffer layer 22, an i-InGaAs light absorption layer 24, an n-graded layer 26, and an n-InP cap layer 28 are formed on an n-InP substrate 20. Zinc (Zn) is diffused into the n-InP cap layer 28 and a p-type diffusion region 32 becoming a light receiving part is formed. InGaAsP lattice matching with InP of the n-InP cap layer 28 is employed in the n-graded layer 26 such that its refractive index varies continuously from the refractive index of the n-InP cap layer 28 to the refractive index of the i-InGaAs light absorption layer 24. COPYRIGHT: (C)2004,JPO&NCIPI
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