| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device employing a MOS type solid-state imaging element capable of supplying a bias voltage necessary for the operation without employing any boosting chip element or the like of a separate body. SOLUTION: A boosting circuit is integrally constituted on a semiconductor substrate wherein the MOS type solid-state imaging element is constituted while the boosting circuit is constituted so as to comprise a charge pump circuit 11 for changing an input voltage into a voltage higher than the input voltage, and an LDO circuit 12 for converting the input voltage VCP inputted from the charge pump circuit 11 into a smoothed and stabilized voltage OUT and outputting the same. COPYRIGHT: (C)2004,JPO&NCIPI
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