发明名称 |
CMP slurry polysilicon and method of forming semiconductor device using the same |
摘要 |
A Chemical Mechanical Polishing(abbreviated as "CMP") slurry composition for polysilicon and method of forming a self-aligned floating gate of a flash memory device are disclosed for performing CMP process using slurry having higher polishing selectivity to polysilicon than to isolation oxide film which is an etching barrier film.
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申请公布号 |
US2004163324(A1) |
申请公布日期 |
2004.08.26 |
申请号 |
US20020334295 |
申请日期 |
2002.12.31 |
申请人 |
LEE SANG ICK;KIM HYUNG HWAN |
发明人 |
LEE SANG ICK;KIM HYUNG HWAN |
分类号 |
C09G1/02;C09K3/14;C09K13/04;H01L21/304;H01L21/321;(IPC1-7):C09K3/14 |
主分类号 |
C09G1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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