发明名称 |
Method for fabricating crystalline-dielectric thin films and devices formed using same |
摘要 |
This invention describes a new method for forming and depositing thin films of crystalline dielectric materials. The present technique uses chemical synthesis to control the granularity and thickness of the dielectric films. This method has several key advantages over existing technologies, and facilitates the integration of crystalline dielectric materials into high-density memory devices.
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申请公布号 |
US2004164363(A1) |
申请公布日期 |
2004.08.26 |
申请号 |
US20040784593 |
申请日期 |
2004.02.23 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BLACK CHARLES;MURRAY CHRISTOPHER BRUCE |
分类号 |
B82B3/00;C01B13/14;H01L21/316;H01L21/336;H01L21/822;H01L21/8242;H01L21/8246;H01L27/04;H01L27/105;H01L27/108;H01L29/78;H01L29/786;(IPC1-7):H01L21/336 |
主分类号 |
B82B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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