发明名称 PHOTO DETECTOR, ITS MANUFACTURING METHOD AND OPTICAL MODULE USING THE PHOTO DETECTOR
摘要 PROBLEM TO BE SOLVED: To provide a high-performance photo detector for inhibiting reemission of light occurring by absorption of light in a light absorption layer, and to provide its manufacturing method and an optical module using the photo detector. SOLUTION: There are provided a semiconductor substrate 101, a light absorption layer 103, a light-sensitive layer 105 including a pn junction 109 constituting a light-sensitive portion 120. The light absorption layer 103 is arranged in a more upper portion than the semiconductor substrate 101, while the light-sensitive layer 105 is arranged in a more upper layer than the light absorption layer 103. The light absorption layer 103 is shorter in edge absorption wavelength than is the light-sensitive layer 105 and contains an element for serving as the center of recombination without an emission of light. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004241588(A) 申请公布日期 2004.08.26
申请号 JP20030028812 申请日期 2003.02.05
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 FUJIWARA KIYOSHI
分类号 H01L31/10;(IPC1-7):H01L31/10 主分类号 H01L31/10
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