| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging element where a pixel pitch is reduced. SOLUTION: In the solid-state imaging element where a plurality of pixel cells are arranged in a row direction or a column direction, each pixel cell is provided with a photoelectric conversion part, a transfer transistor,a floating diffusion part, a source follower transistor, a selection transistor and a reset transistor. A diffusion region which is connected to one photoelectric conversion part and forms the reset transistor, the source follower transistor and a switch transistor, is formed in a place near a photoelectric conversion part adjacent to the photoelectric conversion part. The transfer transistor, the reset transistor, the source follower transistor and the selection transistor are arranged in parallel. COPYRIGHT: (C)2004,JPO&NCIPI
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