| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor crystal growth apparatus which can lower the thermal conductivity in the axial direction of a holder while it can keep high the thermal conductivity in the direction of the periphery of the holder. SOLUTION: The compound semiconductor crystal growth apparatus has a crucible 27 which holds a GaAs melt 31, a heater 39 which gives radiant heat to the crucible 27 to form a desired temperature gradient, and a high thermal conductivity cylindrical holder 43 formed between the heater 39 and the crucible 27. The cylindrical holder 43 is provided with a thermal conduction controlling member which allows thermal conduction in the peripheral direction of the holder 43 but inhibits the thermal conduction in the axial direction. The thermal conduction controlling member is constituted from slits 43a, the slits 43a are provided in the peripheral direction of the holder 43, and the slits 43a divide the holder 43 in the axial direction to form zones. The slits 43a provided in the peripheral direction of the holder 43 are formed in a multistage manner along the axial direction of the holder 43. COPYRIGHT: (C)2004,JPO&NCIPI
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