发明名称 Additive for photoresist composition for resist flow process
摘要 The present invention provides an additive for a photoresist composition for a resist flow process. A compound of following Formula 1 having low glass transition temperature is added to a photoresist composition containing a polymer which is not suitable for the resist flow process due to its high glass transition temperature, thus improving a flow property of the photoresist composition. As a result, the photoresist composition comprising an additive of Formula 1 can be used for the resist flow process. wherein, A, B, R and R' are as defined in the specification of the invention.
申请公布号 US2004166437(A1) 申请公布日期 2004.08.26
申请号 US20040789055 申请日期 2004.02.27
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JUNG MIN HO;HONG SUNG EUN;JUNG JAE CHANG;LEE GEUN SU;BAIK KI HO
分类号 C07J9/00;C08F222/06;G03F7/004;G03F7/039;G03F7/40;H01L21/027;(IPC1-7):G03F7/00 主分类号 C07J9/00
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