| 摘要 |
<P>PROBLEM TO BE SOLVED: To overcome the problem wherein power consumption cannot be reduced due to the generation of the excessive discharge in bit lines BL<SB>1</SB>-BL<SB>4</SB>. <P>SOLUTION: This device comprises a plurality of memory cells C, located at the intersections of a plurality of word lines WL and a plurality of bit lines BL, a plurality of data storage circuits 111 connected in one-to-one manner with the plurality of bit lines BL, and a plurality of selectors 112 connected to one of the plurality of bit lines which have one-to-one connection to the plurality of data storing circuits 111, and to which the plurality of connected data storage circuits 111 are connected. Each of the plurality of data storing circuits stores the data stored in one of the plurality of the memory cells connected to the bit lines connected based on control signal READ. Each of a plurality of selectors 112 outputs any one of the data stored in one of the plurality of the memory cells, connected with one of the plurality of the bit lines based on the control signal READ, or the data stored in the plurality of connected data storage circuits 111. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
