发明名称 |
Method of manufacturing a semiconductor light emitting device, semiconductor light emitting device, method of manufacturing a semiconductor device, semiconductor device, method of manufacturing a device, and device |
摘要 |
When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III-V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III-V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III-V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions. |
申请公布号 |
US2004164308(A1) |
申请公布日期 |
2004.08.26 |
申请号 |
US20030719206 |
申请日期 |
2003.11.21 |
申请人 |
ASATSUMA TSUNENORI;TOMIYA SHIGETAKA;TAMAMURA KOSHI;TOJO TSUYOSHI;GOTO OSAMU;MOTOKI KENSAKU |
发明人 |
ASATSUMA TSUNENORI;TOMIYA SHIGETAKA;TAMAMURA KOSHI;TOJO TSUYOSHI;GOTO OSAMU;MOTOKI KENSAKU |
分类号 |
C30B25/02;H01L21/20;H01L33/00;H01L33/02;H01L33/16;H01L33/32;H01S5/02;H01S5/20;H01S5/22;H01S5/223;H01S5/323;H01S5/343;H01S5/40;(IPC1-7):H01L33/00 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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