| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting diode having a high-speed responsiveness and capable of stabilizing the optical output against a change in temperature and reducing waveform distortion ΔTw which may exert influence on sound quality, and to provide a method of manufacturing the light emitting diode. <P>SOLUTION: In the method of manufacturing a light emitting diode by allowing a p-type clad layer 12, an active layer 14 and an n-type clad layer 16 to successively grow on the surface of a GaAs substrate 10, the growing temperature of the active layer 14 is set to ≤850°C, preferably set to about 790°C, the ratio of impurity concentration of the n-type clad layer 16 to the impurity concentration of the active layer 14 is controlled to the range of 3.4×10<SP>-2</SP>to 5.9×10<SP>-1</SP>, preferably in the range of ≤3.0×10<SP>-1</SP>. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
