METHOD FOR FORMING METAL LINE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a metal line of a semiconductor device is provided to prevent a thinning phenomenon and a lifting phenomenon of the second photoresist pattern by using a dual damascene method. CONSTITUTION: The first interlayer dielectric pattern(120a) having the first trench is formed on a substrate(100). The second etch-stop layer is formed on the first interlayer dielectric pattern. The second etch-stop layer spacer is formed by etching back the second etch-stop layer. The second interlayer dielectric(140) is formed thereon. A mask pattern is formed on the second interlayer dielectric. The second trench is formed by etching the second interlayer dielectric. The mask pattern is removed therefrom. The first trench and the second trench are buried by metallic materials.