METHOD FOR FABRICATING MOSFET HAVING POCKET REGION

摘要

PURPOSE: A method for fabricating a MOSFET having a pocket region is provided to restrict a short channel effect by controlling the density and a position of the pocket region. CONSTITUTION: A gate electrode layer is formed on a semiconductor substrate(50). An LDD region is formed on the semiconductor substrate by implanting ions. A blocking layer pattern including plural blocking layers(64,66) is formed on the semiconductor substrate. A pocket region is formed on the semiconductor substrate by performing an ion implantation process using the gate electrode layer and the blocking layer pattern as ion implantation masks. The blocking layer is removed therefrom. A spacer is formed on a sidewall of the gate electrode layer. A deep source/drain region is formed on the semiconductor substrate by performing an ion implantation process using the gate electrode layer as the ion implantation mask.