| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the reliability of a wafer-level CSP (Chip Size Package) semiconductor device. <P>SOLUTION: The semiconductor device contains a semiconductor substrate 10 having an active element region 12 and electrodes 14 electrically connected to an integrated circuit containing an active element, a resin layer 18 formed on the surface of the substrate 10 on which the electrodes 14 are formed by avoiding the electrodes 14, and a wiring layer 24 extended to the resin layer 18 from the electrodes 14 and containing a plurality of electrical connections. The device also contains external terminals 30 provided in the electrical connections. Of the electrical connections, the first electrical connection 26 has a surface form having a larger area than the surface form of the second electrical connection 28 has. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
