| 摘要 |
PROBLEM TO BE SOLVED: To provide a new semiconductor device for static electricity protection and a semiconductor device containing the semiconductor device for static electricity protection. SOLUTION: The semiconductor device 100 for static electricity protection contains a first-conductivity first region 14 and a second-conductivity second region 12 formed in a first-conductivity semiconductor substrate 10. The second region 12 contains a first-conductivity first impurity diffusing layer 22 and a first-conductivity second impurity diffusing layer 24 adjoining the layer 22. The first region 14 contains a first-conductivity third impurity diffusing layer 26. The second impurity diffusing layer 24 is formed so that a depletion layer 24a formed under the layer 24 may be connected to the semiconductor substrate 10 when the positive voltage of a prescribed value is impressed upon the first impurity diffusing layer 22. COPYRIGHT: (C)2004,JPO&NCIPI
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