发明名称 |
MOLEHOLE EMBEDDED 3-D CROSSBAR ARCHITECTURE USED IN ELECTROCHEMICAL MOLECULAR MEMORY DEVICE |
摘要 |
<p>The invention relates to a method of making a nanoscale electrochemical cell, and to a nanoscale electrochemical cell and to an electrochemical cell array. The method includes: depositing on a non-conducting substrate a first conductor; depositing on the conductor a semiconductor or a nonconductor; depositing on the semiconductor or nonconductor a second conductor; and forming a hole through the second conductor, the nonconductor or semiconductor, and the first conductor. The hole forms a well having a cross-sectional area cross-sectional area less than about 1 micron by 1 micron, and the first conductor, the insulator or semiconductor, and the second conductor comprise a wall of the well.</p> |
申请公布号 |
EP1449218(A2) |
申请公布日期 |
2004.08.25 |
申请号 |
EP20020807197 |
申请日期 |
2002.10.07 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
KUHR, WERNER, G.;BOCIAN, DAVID, F.;LIU, ZHIMING;YASSERI, AMIR |
分类号 |
G01N33/483;G11C13/02;C12N15/09;G01N27/403;G01N27/416;G01N33/543;G01N37/00;G11C11/56;H01L27/28;H01L51/05;H01M4/38;H01M4/58;H01M4/60;H01M6/40;H01M10/04;(IPC1-7):G11C11/00;G11C13/00;H01M2/02 |
主分类号 |
G01N33/483 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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