| 摘要 |
<p>A flash memory comprises a plurality of memory sectors, each of which has a plurality of flash memory cells (M); a memory cell array (12) having said plurality of memory sectors; means (13, 14, 15) to write an information data and a check data in said memory sector; means (13, 14, 15) to read the information data and the check data from said memory sector; an error correction circuit (11), which generates the check data from the information data, and performs an error correction of the information data from the information data and the check data; and means (2, 3, 13, 14, 15) to read data of a predetermined memory sector according to a turn-on of a power supply. <IMAGE></p> |
