PROCESS FOR PRODUCING INSULATING FILM

摘要

In a case where a CF film is used as an interlayer dielectric film for a semiconductor device, when a wiring of W (tungsten) is formed, the CF film is heated to a temperature of, e.g., about 400 to 450 DEG C. At this time, F gases are desorbed from the CF film, so that there are various disadvantages due to the corrosion of the wiring and the decrease of film thickness. A CF gas and a hydrocarbon gas are used as thin film deposition gases. These gases are activated as plasma to deposit a CF film on a semiconductor wafer using active species thereof. Subsequently, before forming a wiring, annealing is carried out at a temperature of, e.g., 425 DEG C, for 10 minutes to 2 hours using N2, H2 or F2 gas as a process gas at a flow rate of 50 sccm SIMILAR 10 slm under a pressure of from 0.1 Pa to 1 MPa (from 0.1 Pa to 100 KPa in the case of H2 gas), to desorb F, CF, CF2 and CF3 from the CF film. Thermo stability is improved by the recombination of uncombined materials produced by the desorption.