发明名称 Substrate processing apparatus and method for fabricating semiconductor device
摘要 A substrate processing apparatus includes a first holder made of silicon carbide or silicon and a second holder made of quartz. Each of the first and the second holder is of a ring shape and the second ring shaped holder is mounted on the first holder. The second holder is used to mount a substrate thereon while the substrate is being processed.
申请公布号 US6780251(B2) 申请公布日期 2004.08.24
申请号 US20020196958 申请日期 2002.07.18
申请人 HITACHI KOKUSAI ELECTRIC, INC. 发明人 TOMETSUKA KOUJI
分类号 H01L21/683;C23C16/458;H01L21/22;H01L21/324;H01L21/673;H01L21/687;(IPC1-7):H01L21/00;C23C16/00 主分类号 H01L21/683
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