发明名称 |
Substrate processing apparatus and method for fabricating semiconductor device |
摘要 |
A substrate processing apparatus includes a first holder made of silicon carbide or silicon and a second holder made of quartz. Each of the first and the second holder is of a ring shape and the second ring shaped holder is mounted on the first holder. The second holder is used to mount a substrate thereon while the substrate is being processed.
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申请公布号 |
US6780251(B2) |
申请公布日期 |
2004.08.24 |
申请号 |
US20020196958 |
申请日期 |
2002.07.18 |
申请人 |
HITACHI KOKUSAI ELECTRIC, INC. |
发明人 |
TOMETSUKA KOUJI |
分类号 |
H01L21/683;C23C16/458;H01L21/22;H01L21/324;H01L21/673;H01L21/687;(IPC1-7):H01L21/00;C23C16/00 |
主分类号 |
H01L21/683 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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