Tunneling magnetoresistive sensor with spin polarized current injection

摘要

A tunneling magnetoresistive (TMR) stack configured to operate in a current-perpendicular-to-plane (CPP) mode has a plurality of layers including a spin valve and a barrier layer. The spin valve is used to inject a spin polarized sense current into the barrier layer for increasing a magnetoresistive (MR) ratio of the TMR stack.