发明名称 |
Semiconductor bidirectional switching device and method |
摘要 |
A semiconductor switching device (10) is formed on a semiconductor substrate (12) having a trench (44) formed on one of its surfaces (42). A control electrode (32) activates a wall of the trench to form a conduction channel (36). A first conduction electrode (40) is disposed on the semiconductor substrate to have a first doped region (34) for receiving a current and a second doped region (24) for routing the current to the conduction channel.
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申请公布号 |
US6781195(B2) |
申请公布日期 |
2004.08.24 |
申请号 |
US20010766966 |
申请日期 |
2001.01.23 |
申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, L.L.C. |
发明人 |
WU YUJING;PEARSE JEFFREY |
分类号 |
H01L29/08;H01L29/423;H01L29/78;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113 |
主分类号 |
H01L29/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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