Laser annealing apparatus and method of fabricating thin film transistor

摘要

In a method of fabricating a thin film transistor through conversion of an amorphous silicon film into a polysilicon film to be an active layer of the thin film transistor by a laser annealing treatment, a laser annealing apparatus comprising a plurality of semiconductor laser devices arranged performs the laser annealing treatment by irradiating the surface of the amorphous silicon film with laser light uniformized in the light intensity of the laser light radiated onto the surface of the amorphous silicon film, whereby the crystal grain diameter of the polysilicon film obtained through recrystallization is uniformized, and it is possible to obtain a thin film transistor with transistor characteristics enhanced by using the polysilicon film as the active layer.