发明名称 |
Via-first dual damascene process |
摘要 |
The present invention pertains to a via-first dual damascene process. A semiconductor substrate having a conductive structure and a dielectric layer on the semiconductor substrate is provided. The dielectric layer has a via opening exposing the conductive structure. The via opening is filled with a gap-filling polymer to form a gap-filling polymer (GFP) layer on the dielectric layer. The GFP layer is etched back to a predetermined depth such that an exposed surface of the GFP layer is lower than surface of the dielectric layer to form a recess, thereby exposing portions of sidewalls of the via opening. A surface treatment for altering surface property of the sidewalls and the exposed surface of the GFP layer is then carried out, thereby preventing a subsequent deep UV photoresist from interacting with the sidewalls or the exposed surface of the GFP layer either in a chemical or physical way.
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申请公布号 |
US6780761(B1) |
申请公布日期 |
2004.08.24 |
申请号 |
US20030604771 |
申请日期 |
2003.08.15 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
WU CHIH-NING;LIU MING-HSING;CHOU HSIAO-PANG;LIN CHING-PIAO;WANG PEI-JEN |
分类号 |
H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
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主权项 |
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地址 |
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