发明名称 |
Semiconductor devices and their manufacture |
摘要 |
In a cellular power MOSFET or other semiconductor device, a wide connection across the perimeter of an active device area (120) is replaced with a plurality of narrower conducting fingers (111). The fingers (11) are used as follows in providing a doped edge region (15a) that is required below the connection (110). Dopant (150,151) is implanted at spaces (112) between and beside the fingers (111) and is diffused to form a single continuous region (15a) extending beneath the fingers (111) and at the spaces (112) therebetween. This doped edge region (15a) may be, for example, a deep guard ring in an edge termination of a power MOSFET, or an extension of its channel-accommodating region (15). A trench-gate network (11) of the MOSFET can be connected by the conducting fingers to a gate bond pad and/or field plate (114).
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申请公布号 |
US6780714(B2) |
申请公布日期 |
2004.08.24 |
申请号 |
US20020227672 |
申请日期 |
2002.08.26 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
GAJDA MARK A.;IN 'T ZANDT MICHAEL A. A.;HIJZEN ERWIN A. |
分类号 |
H01L21/336;H01L29/06;H01L29/10;H01L29/40;H01L29/423;H01L29/78;(IPC1-7):H01L21/336;H01L21/76 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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