SURFACE EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME, ESPECIALLY INCREASING THE CONTACT AREA BETWEEN THE UPPER CONTACT LAYER AND THE UPPER OHMIC METAL LAYER

摘要

PURPOSE: A surface emitting diode and a method for manufacturing the same are provided to maintain a low resistance at the interface by increasing the contact area between the upper contact layer and the upper ohmic metal layer, so reducing driving current. CONSTITUTION: A surface emitting diode includes a substrate(10), a bottom contact layer(30), a light emitting layer(50), a top contact layer(70), a top ohmic metal layer(80) and a bottom ohmic metal layer(90). The bottom contact layer is prepared on the substrate. The light emitting layer is formed on the bottom contact layer and provided with an active layer and a pair of clad layers. The top contact layer is formed on the light emitting layer and provided with a concave or convex portion. The top ohmic metal layer is formed on the top contact layer. And, the bottom ohmic metal layer is ohmic contacted to one side of the bottom contact layer.