METHOD FOR MEASURING TILTED ANGLE OF SUBSTRATE IN ION IMPLANTATION PROCESS

摘要

PURPOSE: A method for measuring a tilted angle of a substrate in an ion implantation process is provided to measure the tilted angle by comparing the reference size with the size of the shadow formed on the substrate. CONSTITUTION: A shielding part is inserted between an ion supply source and a substrate having a tilted angle to the traveling direction of ion beams(S110). A shadow of the shielding part is formed by shielding partially the ion beams irradiated to the substrate by using the shielding part(S120). The size of the shadow is calculated by measuring the amount of the implanted ions(S150). The tilted angle of the substrate is measured by comparing the reference size with the measured size of the shadow(S160).