| 发明名称 |
Semiconductor device having contact pads and method for manufacturing the same |
| 摘要 |
Semiconductor devices have gate structures on a semiconductor substrate with first spacers on sidewalls of the respective gate structures. First contact pads are positioned between the gate structures and have heights lower than the heights of the gate structures. Second spacers are disposed on sidewalls of the first spacers and on exposed sidewalls of the first contact pads. Second contact pads are disposed on the first contact pads.
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| 申请公布号 |
US2004161884(A1) |
申请公布日期 |
2004.08.19 |
| 申请号 |
US20030747925 |
申请日期 |
2003.12.30 |
| 申请人 |
LEE DEOK-HYUNG;CHOI SI-YOUNG;LEE BYEONG-CHAN;KIM CHUL-SUNG;JUNG IN-SOO;YOO JONG-RYEOL |
发明人 |
LEE DEOK-HYUNG;CHOI SI-YOUNG;LEE BYEONG-CHAN;KIM CHUL-SUNG;JUNG IN-SOO;YOO JONG-RYEOL |
| 分类号 |
H01L21/28;H01L21/285;H01L21/768;H01L21/8242;H01L23/485;(IPC1-7):H01L21/335 |
主分类号 |
H01L21/28 |
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