发明名称 |
Semiconductor with a nitrided silicon gate oxide and method |
摘要 |
A method of fabricating a transistor includes providing a semiconductor substrate having a surface and forming a nitride layer outwardly of the surface of the substrate. The nitride layer is oxidized to form a nitrided silicon oxide layer comprising an oxide layer beneath the nitride layer. A high-K layer is deposited outwardly of the nitride layer, and a conductive layer is formed outwardly of the high-K layer. The conductive layer, the high-K layer, and the nitrided silicon oxide layer are etched and patterned to form a gate stack. Sidewall spacers are formed outwardly of the semiconductor substrate adjacent to the gate stack, and source/drain regions are formed in the semiconductor substrate adjacent to the sidewall spacers.
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申请公布号 |
US2004159898(A1) |
申请公布日期 |
2004.08.19 |
申请号 |
US20040783081 |
申请日期 |
2004.02.19 |
申请人 |
HATTANGADY SUNIL V.;MAVOORI JAIDEEP;HU CHE-JEN;KHAMANKAR RAJESH B. |
发明人 |
HATTANGADY SUNIL V.;MAVOORI JAIDEEP;HU CHE-JEN;KHAMANKAR RAJESH B. |
分类号 |
H01L21/28;H01L21/336;H01L21/8242;H01L29/51;H01L29/76;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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