| 摘要 |
PROBLEM TO BE SOLVED: To reduce current consumption at thinning refresh time. SOLUTION: A dynamic memory in which refresh operation is performed, has two or more word lines, two or more bit lines, two or more memory cells arranged in an intersection position of the word line and bit line concerned, and a memory cell array MCA having a sense amplifier connected to the bit line. Each word line has a main word line and two or more sub word lines arranged corresponding to the main word lines. In a thinning refresh cycle which thins out refresh operation of a memory cell of a thinning object, in a plurality of refresh cycles, a part of sub word lines are not driven in a plurality of sub word lines corresponding to the main word lines which are driven in accordance with the refresh operation, and a sense amplifier corresponding to a part of sub word lines which are not driven, is not driven. A memory cell of thinning object can be applied to a part of memory cells in the direction of the word line. Accordingly, the number of sub word lines to be driven are reduced, and the number of sense amplifiers to be driven can be reduced. Consequently, the current consumption can be reduced. COPYRIGHT: (C)2004,JPO&NCIPI
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